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ABS1-10~ABS10-10  SAMWIN
類別 橋堆
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發布日期 2016-08-23
 
samwin mosfet

SAMWIN diode
SAMWIN diode
SAMWIN diode

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
關鍵詞:ABS1-10~ABS10-10

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2019下半年彩票大奖